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HAF2017S

Part Number	HAF2017S
Manufacturer	Renesas
Description	Silicon N-Channel Power MOS FET
Published	May 1, 2016
Detailed Description	HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Re...
Datasheet	HAF2017S PDF File

Overview

HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.
2.
00 Apr.
13.
2004 Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.
This FET has the built-in over temperature shutdown circuit in the gate area.
And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features • Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shutdown circuit • Latch type shutdown operation (Need 0 voltage recovery) Outline D...

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