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FS10ASJ-06F

Renesas

N-channel Power MOS FET - Renesas


FS10ASJ-06F
FS10ASJ-06F

PDF File FS10ASJ-06F PDF File



Description
FS10ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 70 mΩ • ID : 10 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.
) : 30 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 10 40 10 10 40 20 – 55 to +150 – 55 to +150 0.
32 REJ03G0241-0200 Rev.
2.
00 Dec 19, 2008 1.
Gate 2.
Drain 3.
Source 4.
Drain Unit V V A A A A A W °C °C g (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 50 µH Typical value REJ03G0241-0200 Rev.
2.
00 Dec 19, 2008 Page 1 of 6 FS10ASJ-06F Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min.
60 ±20 — — 1.
0 — — — — — — — — — — — — — — Typ.
— — — — 1.
5 53 66 0.
27 13 750 130 80 7 18 70 35 1.
0 — 30 Max.
— — 100 ±10 2.
0 70 86 0.
35 — — — — — — — — 1.
5 6.
25 — Unit V V µA µA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns (Tch = 25°C) Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, ...



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