N-channel Power MOS FET - Renesas
Description
FS10ASJ-06F
High-Speed Switching Use Nch Power MOS FET
Features
• Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 70 mΩ • ID : 10 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.
) : 30 ns
Outline
RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A)
2, 4
4
12 3
1
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
Ratings 60 ±20 10 40 10 10 40 20
– 55 to +150 – 55 to +150
0.
32
REJ03G0241-0200 Rev.
2.
00
Dec 19, 2008
1.
Gate 2.
Drain 3.
Source 4.
Drain
Unit V V A A A A A W °C °C g
(Tc = 25°C)
Conditions VGS = 0 V VDS = 0 V
L = 50 µH
Typical value
REJ03G0241-0200 Rev.
2.
00 Dec 19, 2008 Page 1 of 6
FS10ASJ-06F
Electrical Characteristics
Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
Symbol V(BR)DSS V(BR)GSS
IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on)
tr td(off)
tf VSD Rth(ch-c) trr
Min.
60 ±20 — — 1.
0 — — — — — — — — — — — — — —
Typ.
— — — — 1.
5 53 66 0.
27 13 750 130 80 7 18 70 35 1.
0 — 30
Max.
— — 100 ±10 2.
0 70 86 0.
35 — — — — — — — — 1.
5 6.
25 —
Unit V V µA µA V mΩ mΩ V S pF pF pF ns ns ns ns V
°C/W ns
(Tch = 25°C)
Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, ...
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