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RCR1525SI

Part Number	RCR1525SI
Manufacturer	RCR
Description	P-Channel Enhancement Mode Field Effect Transistor
Published	May 1, 2016
Detailed Description	RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VG...
Datasheet	RCR1525SI PDF File

Overview

RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.
5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.
5V High density cell design for low RDS(ON).
z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
z Pin Configuration z Package Information D 3 12 GS z Absolute Maximum Ratings @TA...

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RCR1525SI P-Channel Enhancement Mode Field Effect Transistor - RCR

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