| Part Number | VI20120C-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Title | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| Description | V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rec... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C m... |
| Published | Apr 29, 2016 |
| Datasheet |
 VI20120C-E3 PDF File
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