Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor
Description
CREAT BY ART
HER1601G - HER1608G
16.
0AMPS.
Glass Passivated High Efficient Rectifiers
TO-220AB
Features
Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability
For use in low voltage, high frequency inverter, free wheeling, and polarity protection application
Green compound with suffix "G" on packing code & prefix "G" on datecode
Mechanical Data
Cases: TO-220AB Molded plastic Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed: 260℃/10 seconds .
16", (4.
06mm) from case
Weight: 2.
24 grams
Ordering Information(example)
Part No.
Package Packing Packing code
Packing code (Green)
HER1601G TO-220AB 50 / TUBE
C0
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Symbol
HER 1601G
HER 1602G
HER 1603G
HER 1604G
HER 1605G
HER 1606G
HER 1607G
HER 1608G
VRRM 50 100 200 300 400 600 800 1000
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 560 700
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 800 1000
Maximum Average Forward Rectified Current
IF(AV)
16
Peak Forward Surge Current, 8.
3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)
IFSM
125
Maximum Instantaneous Forward Voltage (Note 1) @8A
VF
1.
0 1.
3 1.
7
Maximum DC Reverse Current at Rated DC Blocking Voltage
@ TA=25 ℃ @ TA=125 ℃
Maximum Reverse Recovery Time (Note 2)
IR Trr
Typical Junction Capacitance (Note 3)
Cj
Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
RθJC TJ TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.
5A, IR=1.
0A, IRR=0.
25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.
0V D.
C.
10 400 50 80 1.
5 - 55 to + 150 - 55 to + 150
80 50
Units V V...
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