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RU30E4B

Ruichips
Part Number RU30E4B
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description RU30E4B N-Channel Advanced Power MOSFET Features • 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V •...
Datasheet PDF File RU30E4B PDF File

RU30E4B
RU30E4B

Overview
RU30E4B N-Channel Advanced Power MOSFET Features • 30V/4A, RDS (ON) =30mΩ(Typ.
)@VGS=10V RDS (ON) =55mΩ(Typ.
)@VGS=4.
5V • Super High Dense Cell Design • ESD protected(Rating 2KV HBM) • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power...


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