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BCW67B

Part Number	BCW67B
Manufacturer	CDIL
Description	Transistor
Published	Apr 25, 2016
Detailed Description	Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC...
Datasheet	BCW67B PDF File

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Total power dissipation at Tamb = 25°C D.
C.
current gain IC = 10 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H IC = 100 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G –VCBO –VCEO –VEBO –IC Ptot hFE hFE hFE hFE hFE BCW 67series 68 series max.
45 60 V max.
32 45 V max.
5V max.
800 mA max 225 mW min.
min.
min.
min.
max.
min.
max.
75 120 180 100 250 160 400 Continental Device India Limited Data Sheet Page 1 of 3 BCW67, A, B, C BCW68, F, G, H BCW67C, 68H IC = 300 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE min.
max.
hFE min.
hFE min.
hFE min.
250 630 35 60 100 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –VCBO Collector–emitter voltage (open base) –VCEO Emitter–base voltage (open collector) –VEBO Collector current (d.
c.
) –IC Total power dissipation at Tamb = 25°C Ptot Storage temperature Tstg max.
max.
max.
max.
max 45 60 32 45 5 800 225 –55 to +150 V V V mA mW °C THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Rth j–a 556 556 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage BCW67 series 68 series IC = 10 mA; IB = 0 IC = 10 mA; VEB = 0 Emitter–base breakdown voltage V(BR)CEO min.
32 V(BR)CES min.
45 45 V 60 V IE = 10 mA; IC = 0 Collector cut–off current V(BR)EBO min.
5V VCE = 32 V; IE = 0 V VCE = 45 V; IE = 0 V VCE ...

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