SMD Transistor - TAITRON
Description
SMD General Purpose Transistor (PNP)
Features
• PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
008 gram
SMD General Purpose Transistor (PNP)
BC856/BC857/BC858
SOT-23
Marking Information
Marking Code
BC856A 3A
BC856B 3B
BC857A 3E
BC857B 3F
BC857C 3G
BC858A 3J
BC858B 3K
BC858C 3L
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
-VCBO -VCEO -VEBO
-IC Ptot TJ TSTG
Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
BC856 BC857 BC858 Unit
Conditions
80 50 30
V
65 45 30
V
555 V
100 mA
350 mW Note 1
150 ° C
-55 to +150
°C
Note: 1.
Package mounted on 99.
5% Alumina 10 x 8 x 0.
6mm.
TAITRON COMPONENTS INCORPORATED www.
taitroncomponents.
com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Rev.
A/AH 2008-05-29 Page 1 of 3
SMD General Purpose Transistor (PNP) BC856/BC857/BC858
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
-ICBO hFE
Collector-Emitter Cut-off Current
BC856/7/8, Suffix ‘A’
BC856/7/8, Suffix ‘B’
D.
C.
Current Gain
BC857/8, Suffix ‘C’ BC856/7/8, Suffix ‘A’
BC856/7/8, Suffix ‘B’
BC857/8, Suffix ‘C’
-VCE(sat) Collector-Emitter Saturation Voltage
-VBE(sat) Base-Emitter Saturation Voltage
-VBE(on) Base-Emitter On Voltage
fT Current Gain-Bandwidth Product Cob Collector Output Capacitance NF Noise Figure
Min.
110 200 420 0.
6 -
Typ.
90 150 270 180 290 520 0.
09 0.
25 0.
7 0.
9 0.
65 150 4.
5 2.
0
Max.
Unit
Conditions
15 nA
-VCB=30V, IE=0
-
- -VCE=5V, -IC=10µA
-
220 450 -VCE=5V, -IC=2mA
800
0.
3 -IC=10mA, -IB=0.
5mA V
0.
65 -IC=100mA, -IB=5mA
- -IC=10mA, -IB=0.
5mA V
- -IC=100mA, -IB=5mA
0.
75 -VCE=5V, -IC=2mA V
0.
82 -VCE=5V, -IC=10mA
-
MHz
-VCE=5V, -IC=10mA, f=100MHz
-
pF
-V...
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