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BC846

TAITRON
Part Number BC846
Manufacturer TAITRON
Description SMD General Purpose Transistor
Published Apr 25, 2016
Detailed Description SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Appl...
Datasheet PDF File BC846 PDF File

BC846
BC846

Overview
SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
008 gram SMD General Purpose Transistor (NPN) BC846/BC847/BC848 SOT-23 Marking Information Marking Code BC846A 1A BC846B 1B BC847A 1E BC847B 1F BC847C 1G BC848A 1J BC848B 1K BC848C 1L Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range BC846 BC847 BC848 Unit Conditions 80 50 30 V 65 45 30 V 665 V 100 mA 350 mW Note 1 150 ° C -55 to +150 °C Note: 1.
Package mounted on 99.
5% Alumina 10 x 8 x 0.
6mm.
TAITRON COMPONENTS INCORPORATED www.
taitroncomponents.
com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415 Rev.
A/AH 2008-05-29 Page 1 of 3 SMD General Purpose Transistor (NPN) BC846/BC847/BC848 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description ICBO hFE Collector-Emitter Cut-off Current BC846/7/8, Suffix ‘A’ BC846/7/8, Suffix ‘B’ D.
C.
Current Gain BC847/8, Suffix ‘C’ BC846/7/8, Suffix ‘A’ BC846/7/8, Suffix ‘B’ BC847/8, Suffix ‘C’ VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage fT Cob NF Current Gain-Bandwidth Product Collector Output Capacitance Noise Figure Min.
110 200 420 0.
58 - Typ.
90 150 270 180 290 520 0.
09 0.
2 0.
7 0.
9 0.
66 300 2.
5 1.
0 Max.
Unit Conditions 15 220 450 800 0.
25 0.
6 0.
7 0.
75 4.
5 10 nA V V V MHz pF dB VCB=30V, IE=0 VCE=5V, IC=10µA VCE=5V, IC=2mA IC=10mA, IB=0.
5mA IC=100mA, IB=5mA IC=10mA, IB=0.
5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.
2mA, RG=2K...


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