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BAT54S

Taiwan Semiconductor
Part Number BAT54S
Manufacturer Taiwan Semiconductor
Description 230mW SMD Schottky Barrier Diode
Published Apr 25, 2016
Detailed Description Small Signal Product 230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - M...
Datasheet PDF File BAT54S PDF File

BAT54S
BAT54S

Overview
Small Signal Product 230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA SOT-23 - Case: Bend lead SOT-23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight: 8 ± 0.
5 mg - Marking Code: KL1,KL2,KL3,KL4 BAT54 / A / C / S Taiwan Semiconductor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Peak Pepetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage Forward Continuous Current Repetitive Peak Forward current (tp≤1S;δ≤0.
5) Forward Surge Current @ t<1.
0s Power Dissipation VRRM VRWM VR IF IFRM IFSM Pd 30 200 300 600 200 Thermal Resistance, Junction to Ambient Operating and Storage Temperature RθJA Tj , TSTG 500 -55 to 125 UNIT V mA mA mA mW °C/W °C PARAMETER Reverse Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time IR=100µA IF=0.
1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1.
0MHz IF=IR=10mA, RL=100Ω, IRR=1mA SYMBOL V(BR) VF IR CT trr MIN 30 --------- MAX -0.
24 0.
32 0.
40 0.
50 1.
00 2.
0 10 5 UNIT V V V V V V µA pF ns Document Number: DS_S1404001 Version: E14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) 1000 Fig.
1 Typical Forward Characteristics IF, Instantaneous Forward Current (mA) 100 10 125oC 25oC -40oC 1 Power Dissipation (mW) 0.
1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 VF, Instantaneous Forward Voltage (V) 1.
6 Fig.
3 Admissible Power Dissipation Curve 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient Temperature (°C) Junction Capacitanc...


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