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RU2H30Q

Ruichips
Part Number RU2H30Q
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU2H30Q N-Channel Advanced Power MOSFET MOSFET Features • 200V/30A, RDS (ON) =75mΩ (Typ.) @ VGS=10V • Ultra Low On-Resi...
Datasheet PDF File RU2H30Q PDF File

RU2H30Q
RU2H30Q

Overview
RU2H30Q N-Channel Advanced Power MOSFET MOSFET Features • 200V/30A, RDS (ON) =75mΩ (Typ.
) @ VGS=10V • Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Pin Description TO-220 TO-220F TO-263 TO-247 Applications • Switching Application Systems • DC/DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– JUL.
, 2011 Rating 200 ±25 175 -55 to 175 30 ① 120 ② 30 ② 23 180 90 0.
83 Unit V °C °C A A A W °C/W 81 mJ www.
ruichips.
com RU2H30Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2H30Q Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 200V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=17A 200 2 V 1 µA 30 34V ±100 nA 75 85 mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ...


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