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RU2H50R

Ruichips
Part Number RU2H50R
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU2H50R N-Channel Advanced Power MOSFET MOSFET Features • 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V • Low Gate Charge •...
Datasheet PDF File RU2H50R PDF File

RU2H50R
RU2H50R

Overview
RU2H50R N-Channel Advanced Power MOSFET MOSFET Features • 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V • Low Gate Charge • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant Pin Description TO-220 Applications • Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– FEB.
, 2012 Rating 200 ±25 175 -55 to 175 60 ① 230 ② 60 ② 45 312 156 0.
48 Unit V °C °C A A A W °C/W 140 mJ www.
ruichips.
com RU2H50R Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2H50R Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 200V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=28A 200 2 V 1 µA 30 34V ±100 nA 36 43 mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=28A, VGS=0V ISD=28A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=50V, Frequ...


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