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RU2HE2D

Ruichips
Part Number RU2HE2D
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU2HE2D N-Channel Advanced Power MOSFET MOSFET Features • 200V/1.2A, RDS (ON) =0.95Ω (Typ.) @ VGS=10V RDS (ON) =1Ω (Typ...
Datasheet PDF File RU2HE2D PDF File

RU2HE2D
RU2HE2D

Overview
RU2HE2D N-Channel Advanced Power MOSFET MOSFET Features • 200V/1.
2A, RDS (ON) =0.
95Ω (Typ.
) @ VGS=10V RDS (ON) =1Ω (Typ.
) @ VGS=4.
5V • ESD Protected • Reliable and Rugged • Fast Switching • Lead Free and Green Available Pin Description SOT-223 Applications • Power Management • DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID Continuous Drain Current TA=25°C TA=70°C PD ② RθJA Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 200 ±20 150 -55 to 150 1 4.
5 ① 1.
2 0.
9 2.
5 1.
6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
B – JUL.
, 2011 www.
ruichips.
com RU2HE2D Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2HE2D Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=250µA 200 VDS= 200V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA 2 VGS=±16V, VDS=0V ③ RDS(ON) Drain-Source On-state Resistance VGS= 10V, IDS=1A VGS= 4.
5V, IDS=0.
6A 3 0.
95 1 1 30 4 ±10 1.
2 1.
5 V µA V µA Ω Ω Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=100V, Frequency=1.
0MHz VDD=1...


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