DatasheetsPDF.com

RU2HE5L

Ruichips
Part Number RU2HE5L
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU2HE5L N-Channel Advanced Power MOSFET MOSFET Features • 200V/4.2A, RDS (ON) =1Ω(tpy.)@VGS=10V RDS (ON) =1.1Ω(tpy.)@VG...
Datasheet PDF File RU2HE5L PDF File

RU2HE5L
RU2HE5L

Overview
RU2HE5L N-Channel Advanced Power MOSFET MOSFET Features • 200V/4.
2A, RDS (ON) =1Ω(tpy.
)@VGS=10V RDS (ON) =1.
1Ω(tpy.
)@VGS=4.
5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters Pin Description TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 200 ±20 175 -55 to 175 4.
2 ① 16 ② 4.
2 3 40 20 3.
75 10 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– JUN.
, 2011 www.
ruichips.
com RU2HE5L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2HE5L Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 200 V IDSS Zero Gate Voltage Drain Current VDS=200V, VGS=0V TJ=85°C 1 µA 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 234V IGSS Gate Leakage Current VGS=±16V, VDS=0V ±10 µA ④ RDS(ON) Drain-Source On-state Resistance VGS= 10V, IDS=2A VGS= 4.
5V, IDS=1.
5A 1 1.
2 1.
1 1.
3 Ω Ω Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charg...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)