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RU2H30R

Ruichips
Part Number RU2H30R
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description Features • 200V/30A, RDS (ON) =75mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated...
Datasheet PDF File RU2H30R PDF File

RU2H30R
RU2H30R


Overview
Features • 200V/30A, RDS (ON) =75mΩ(Typ.
) @ VGS=10V • Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • Switching Application Systems • UPS RU2H30R N-Channel Advanced Power MOSFET Pin Description GD S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 200 ±25 175 -55 to 175 30 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 120 A 30 A 23 176 W 88 0.
85 °C/W 62.
5 °C/W 81 mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– SEP.
, 2013 1 www.
ruichips.
com RU2H30R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2H30R Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=200V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=17A Diode Characteristics 200 1 30 24 ±100 75 85 ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs 1.
2 150 125 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics⑤ VG...



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