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RU20T7G

Ruichips
Part Number RU20T7G
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20T7G N-Channel Advanced Power MOSFET MOSFET Features • 20V/7A, RDS (ON) =12mΩ (Typ.) @ VGS=4.5V RDS (ON) =18mΩ (Typ....
Datasheet PDF File RU20T7G PDF File

RU20T7G
RU20T7G

Overview
RU20T7G N-Channel Advanced Power MOSFET MOSFET Features • 20V/7A, RDS (ON) =12mΩ (Typ.
) @ VGS=4.
5V RDS (ON) =18mΩ (Typ.
) @ VGS=2.
5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected • Lead Free and Green Available Pin Description TSSOP-8 Applications • PWM Applications Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.
5V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±8 150 -55 to 150 2 ① 28 7 5.
5 1.
5 0.
96 83.
5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– SEP.
, 2012 www.
ruichips.
com RU20T7G Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20T7G Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=85°C 1 µA 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.
5 0.
7 1.
0 V IGSS Gate Leakage Current VGS=±8V, VDS=0V ±10 uA ③ RDS(ON) Drain-Source On-state Resistance VGS=4.
5V, IDS=7A VGS=2.
5V, IDS=5.
5A 12 16 mΩ 18 25 mΩ Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.
0MHz ...


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