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RU20T8M7

Ruichips
Part Number RU20T8M7
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20T8M7 N-Channel Advanced Power MOSFET Features • 20V/8A, RDS (ON) =13mΩ(Typ.)@VGS=4.5V RDS (ON) =14mΩ(Typ.)@VGS=4V R...
Datasheet PDF File RU20T8M7 PDF File

RU20T8M7
RU20T8M7

Overview
RU20T8M7 N-Channel Advanced Power MOSFET Features • 20V/8A, RDS (ON) =13mΩ(Typ.
)@VGS=4.
5V RDS (ON) =14mΩ(Typ.
)@VGS=4V RDS (ON) =16mΩ(Typ.
)@VGS=3.
1V RDS (ON) =18mΩ(Typ.
)@VGS=2.
5V • Super High Dense Cell Design • Fast Switching Speed • ESD Protected • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC-DC Converters • Power Management Pin Description G2S2S2 D1/D2 PIN1 G1S1S1 PIN1 SDFN2050 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=4.
5V) ID② Continuous Drain Current@TA(VGS=4.
5V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S1 S2 Dual N-Channel MOSFET Rating Unit TC=25°C 20 ±10 150 -55 to 150 28 V °C °C A TC=25°C 60 A TC=25°C 28 TC=100°C 18 A TA=25°C 8 TA=70°C 6.
4 TC=25°C 25 TC=100°C 10 W TA=25°C 1.
7 TA=70°C 1.
1 Ruichips Semiconductor Co.
, Ltd Rev.
A– MAY.
, 2013 1 www.
ruichips.
com RU20T8M7 Symbol Parameter Rating Unit RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 5 75 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed TBD Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20T8M7 Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±10V, VDS=0V VGS=4.
5V, IDS=8A ⑤ RDS(ON) VGS=4V, IDS=7A Drain-Source On-state Resistance VGS=3.
1V, IDS=6A VGS=2.
5V, IDS=5A 20 24 1 30 0.
5 1.
5 ±10 13 15 14 16 16 18 18 20 Diode Characteristics VSD⑤ trr Diode Forward Volta...


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