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RU20P5E

Ruichips
Part Number RU20P5E
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20P5E P-Channel Advanced Power MOSFET Features • -20V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-3...
Datasheet PDF File RU20P5E PDF File

RU20P5E
RU20P5E

Overview
RU20P5E P-Channel Advanced Power MOSFET Features • -20V/-5A, RDS (ON) =50mΩ(Typ.
)@VGS=-4.
5V RDS (ON) =65mΩ(Typ.
)@VGS=-3V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description SDG Applications • Load Switch • Power Management SOT89 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.
5V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -20 ±12 150 -55 to 150 -1.
2 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -20 A -5 A -3.
9 1.
25 W 0.
8 10 °C/W 100 °C/W 56 mJ Ruichips Semiconductor Co.
, Ltd Rev.
C– DEC.
, 2013 1 www.
ruichips.
com RU20P5E Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P5E Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±12V, VDS=0V ⑤ RDS(ON) VGS=-4.
5V, IDS=-5A Drain-Source On-state Resistance VGS=-3V, IDS=-4A -20 -1 -30 -0.
5 -1.
5 ±100 50 60 65 80 Diode Characteristics VSD⑤ trr Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics⑥ ISD=-5A, VGS=0V ISD=-5A, dlSD/dt=100A/µs -1.
2 11 6 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off ...


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