DatasheetsPDF.com

RU20P2B

Ruichips
Part Number RU20P2B
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20P2B P-Channel Advanced Power MOSFET Features • -20V/-2.4A, RDS (ON) =95mΩ(Typ.)@VGS=-4.5V RDS (ON) =140mΩ(Typ.)@VGS...
Datasheet PDF File RU20P2B PDF File

RU20P2B
RU20P2B

Overview
RU20P2B P-Channel Advanced Power MOSFET Features • -20V/-2.
4A, RDS (ON) =95mΩ(Typ.
)@VGS=-4.
5V RDS (ON) =140mΩ(Typ.
)@VGS=-2.
5V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.
5V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -20 ±12 150 -55 to 150 -1.
25 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -9.
6 A -2.
4 A -1.
9 1 W 0.
64 - °C/W 125 °C/W TBD mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– JUL.
, 2013 1 www.
ruichips.
com RU20P2B Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P2B Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±16V, VDS=0V ⑤ RDS(ON) VGS=-4.
5V, IDS=-2.
4A Drain-Source On-state Resistance VGS=-2.
5V, IDS=-1.
8A -20 -1 -30 -0.
4 -1 ±100 95 120 140 160 Diode Characteristics VSD⑤ trr Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics⑥ ISD=-1A, VGS=0V ISD=-2.
4A, dlSD/dt=100A/µs -1.
2 7 4 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fal...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)