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RU20P4C

Ruichips
Part Number RU20P4C
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20P4C P-Channel Advanced Power MOSFET MOSFET Features • -20V/-4A, RDS (ON) =40mΩ (Typ.) @ VGS=-4.5V RDS (ON) =55mΩ (T...
Datasheet PDF File RU20P4C PDF File

RU20P4C
RU20P4C


Overview
RU20P4C P-Channel Advanced Power MOSFET MOSFET Features • -20V/-4A, RDS (ON) =40mΩ (Typ.
) @ VGS=-4.
5V RDS (ON) =55mΩ (Typ.
) @ VGS=-2.
5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available Pin Description SOT-23-3 Applications • Power Management • Load Switch Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -20 ±12 150 -55 to 150 -1.
5 ① -16 -4 -3.
2 1.
3 0.
8 100 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– JUL.
, 2011 www.
ruichips.
com RU20P4C Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P4C Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=-250µA -20 VDS=-20V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA -0.
4 VGS=±10V, VDS=0V ③ RDS(ON) Drain-Source On-state Resistance VGS=-4.
5V, IDS=-4A VGS=-2.
5V, IDS=-3A -1 -30 -0.
7 -1.
1 ±100 40 60 55 100 V µA V nA mΩ mΩ Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS...


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