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RU20P18L

Ruichips
Part Number RU20P18L
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20P18L P-Channel Advanced Power MOSFET Features • -20V/-18A, RDS (ON) =30mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=...
Datasheet PDF File RU20P18L PDF File

RU20P18L
RU20P18L

Overview
RU20P18L P-Channel Advanced Power MOSFET Features • -20V/-18A, RDS (ON) =30mΩ(Typ.
)@VGS=-4.
5V RDS (ON) =45mΩ(Typ.
)@VGS=-2.
5V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch • Power Management Pin Description D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -20 ±12 175 -55 to 175 -18 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -72 A -18 A -13 30 W 15 5 °C/W 100 °C/W 56 mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– MAY.
, 2013 1 www.
ruichips.
com RU20P18L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P18L Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±12V, VDS=0V ④ RDS(ON) VGS=-4.
5V, IDS=-9A Drain-Source On-state Resistance VGS=-2.
5V, IDS=-6A -20 -1 -30 -0.
4 -1 ±100 30 40 45 60 Diode Characteristics VSD④ trr Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics⑤ ISD=-18A, VGS=0V ISD=-9A, dlSD/dt=100A/µs -1.
2 13 8 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn...


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