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RU20E8H

Ruichips
Part Number RU20E8H
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20E8H N-Channel Advanced Power MOSFET MOSFET Features • 20V/8.8A, RDS (ON) =12mΩ (Typ.) @ VGS=10V RDS (ON) =15mΩ (Typ...
Datasheet PDF File RU20E8H PDF File

RU20E8H
RU20E8H


Overview
RU20E8H N-Channel Advanced Power MOSFET MOSFET Features • 20V/8.
8A, RDS (ON) =12mΩ (Typ.
) @ VGS=10V RDS (ON) =15mΩ (Typ.
) @ VGS=4.
5V RDS (ON) =21mΩ (Typ.
) @ VGS=2.
5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected • Lead Free and Green Available Pin Description SOP-8 Applications • Power Management • Converters Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±12 150 -55 to 150 3 ① 34 8.
8 7 2.
5 1.
6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– SEP.
, 2011 www.
ruichips.
com RU20E8H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20E8H Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 V IDSS Zero Gate Voltage Drain Current VDS= 20V, VGS=0V TJ=85°C 1 µA 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.
5 0.
8 1.
5 V IGSS Gate Leakage Current VGS=±12V, VDS=0V ±10 µA VGS= 10V, IDS=8A ③ RDS(ON) Drain-Source On-state Resistance VGS= 4.
5V, IDS=5A 12 16 mΩ 15 20 mΩ VGS= 2.
5V, IDS=4A 21 26 mΩ Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=2.
5A, VGS=0V ISD=8A, dlSD/dt=...


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