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RU20E60L

Ruichips
Part Number RU20E60L
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU20E60L N-Channel Advanced Power MOSFET Features • 20V/60A, RDS (ON) =6mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desig...
Datasheet PDF File RU20E60L PDF File

RU20E60L
RU20E60L

Overview
RU20E60L N-Channel Advanced Power MOSFET Features • 20V/60A, RDS (ON) =6mΩ(Typ.
)@VGS=4.
5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC converter • Motor Drives Pin Description D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=4.
5V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co.
, Ltd Rev.
B– MAR.
, 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 20 ±16 175 -55 to 175 60 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 240 A 60 A 43 52 W 26 2.
9 °C/W 100 °C/W 90 mJ www.
ruichips.
com RU20E60L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20E60L Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C 1 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.
5 1 1.
5 IGSS Gate Leakage Current VGS=±16V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=4.
5V, IDS=30A ±10 67 Diode Characteristics ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs 1.
2 25 15 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charg...


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