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RU1Z120R

Ruichips
Part Number RU1Z120R
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU1Z120R N-Channel Advanced Power MOSFET Features • 150V/120A, RDS (ON) =11mΩ(Typ.)@VGS=10V • Reliable and Rugged • 100...
Datasheet PDF File RU1Z120R PDF File

RU1Z120R
RU1Z120R

Overview
RU1Z120R N-Channel Advanced Power MOSFET Features • 150V/120A, RDS (ON) =11mΩ(Typ.
)@VGS=10V • Reliable and Rugged • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High Speed Power Switching • High Efficiency Synchronous in SMPS • Automotive applications and a wide variety of other applications GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480 A 120 A 85 375 W 188 0.
4 °C/W 62.
5 °C/W 552 mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– Feb.
, 2014 1 www.
ruichips.
com RU1Z120R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1Z120R Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=60A Diode Characteristics 150 1 30 2.
5 3.
1 4.
5 ±100 11 15 VSD④ trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs 1.
2 56 102 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise T...


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