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RU1HP60R

Ruichips
Part Number RU1HP60R
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU1HP60R P-Channel Advanced Power MOSFET Features • -100V/-60A, RDS (ON) =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Sup...
Datasheet PDF File RU1HP60R PDF File

RU1HP60R
RU1HP60R

Overview
RU1HP60R P-Channel Advanced Power MOSFET Features • -100V/-60A, RDS (ON) =18mΩ(Typ.
)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications •Inverters Pin Description G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -100 ±25 175 -55 to 175 -60 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -240 -60 -42 188 94 0.
8 62.
5 A A W °C/W °C/W 400 mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– APR.
, 2013 1 www.
ruichips.
com RU1HP60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1HP60R Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-100V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=-10V, IDS=-60A Diode Characteristics -100 -1 -30 -2 -4 ±100 18 25 ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=-30A, VGS=0V ISD=-60A, dlSD/dt=100A/µs -1.
5 175 620 Dynamic Characteristics⑤ RG Ciss Coss Crss td(ON) tr td(OFF) Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time VGS...


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