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RU1H60R

Ruichips
Part Number RU1H60R
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU1H60R N-Channel Advanced Power MOSFET Features • 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=...
Datasheet PDF File RU1H60R PDF File

RU1H60R
RU1H60R

Overview
RU1H60R N-Channel Advanced Power MOSFET Features • 100V/60A, RDS (ON) =17 mΩ(Typ.
)@VGS=10V RDS (ON) =18.
5 mΩ(Typ.
)@VGS=4.
5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching Applications Pin Description TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright Ruichips Semiconductor Co.
, Ltd Rev.
B– DEC.
, 2012 Rating 100 ±20 175 -55 to 175 ① 60 ② 240 ① 60 39 120 60 1.
25 Unit V °C °C A A A W W °C/W 169 mJ www.
ruichips.
com RU1H60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H60R Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250µA 100 VDS=100V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250µA VGS=±20V, VDS=0V 1 ④ RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=30A VGS=4.
5V, IDS=20A 1 30 23 ±100 17 20 18.
5 25 V µA V nA mΩ mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ...


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