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RU1H130S

Ruichips
Part Number RU1H130S
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU1H130S N-Channel Advanced Power MOSFET Features •100V/130A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Desig...
Datasheet PDF File RU1H130S PDF File

RU1H130S
RU1H130S

Overview
RU1H130S N-Channel Advanced Power MOSFET Features •100V/130A, RDS (ON) =7mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description D Applications • High Efficiency Synchronous Rectification in SMPS • High Speed Power Switching G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 175 -55 to 175 130 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 520 A 130 A 92 300 W 150 0.
5 °C/W 62.
5 °C/W 552 mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– DEC.
, 2013 1 www.
ruichips.
com RU1H130S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H130S Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100 VDS=100V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C 1 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 4 IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=65A ±100 79 Diode Characteristics ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=65A, VGS=0V ISD=65A, dlSD/dt=100A/µs 1.
2 42 64 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time...


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