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RU1H100

Ruichips
Part Number RU1H100
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU1H100 N-Channel Advanced Power MOSFET Features • 100V/75A RDS (ON)=11mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • E...
Datasheet PDF File RU1H100 PDF File

RU1H100
RU1H100

Overview
RU1H100 N-Channel Advanced Power MOSFET Features • 100V/75A RDS (ON)=11mΩ(Typ.
) @ VGS=10V • Ultra Low On-Resistance • Extremely high dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested Applications ·High Speed Power Switching ·Uninterruptible Power Supply Pin Description TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings StoragEeAST②emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed -55 to 150 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 100 ±25 175 -55 to 175 ① 75 300 ① 75 59 200 100 0.
75 62.
5 400 Unit V °C °C A A W °C/W mJ Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A –SEP.
, 2010 www.
ruichips.
com RU1H100 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H100 Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100 VDS= 100V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 IGSS Gate Leakage Current VGS=±25V, VDS=0V ③ RDS(ON) Drain-Source On-state Resistance VGS= 10V, IDS=40A V 1 µA 30 34V ±100 nA 11 14 mΩ Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg ...


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