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RU16P8M4

Ruichips
Part Number RU16P8M4
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU16P8M4 P-Channel Advanced Power MOSFET Features • -16V/-8A, RDS (ON) =40mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-...
Datasheet PDF File RU16P8M4 PDF File

RU16P8M4
RU16P8M4

Overview
RU16P8M4 P-Channel Advanced Power MOSFET Features • -16V/-8A, RDS (ON) =40mΩ(Typ.
)@VGS=-4.
5V RDS (ON) =65mΩ(Typ.
)@VGS=-2.
5V • Super High Dense Cell Design • Fast Switching Speed • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Swtich • Battery Charge • DC/DC Converters Pin Description G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-4.
5V) ID② Continuous Drain Current@TA(VGS=-4.
5V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S P-Channel MOSFET Rating Unit TC=25°C -16 ±12 150 -55 to 150 -14 V °C °C A TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C -56 -14 -9 -8 -5.
6 17.
8 7.
1 2.
5 1.
6 A A W Ruichips Semiconductor Co.
, Ltd Rev.
A– MAY.
, 2013 1 www.
ruichips.
com RU16P8M4 Symbol Parameter Rating Unit RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 7 50 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed TBD Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU16P8M4 Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±12V, VDS=0V ⑤ RDS(ON) VGS=-4.
5V, IDS=-4A Drain-Source On-state Resistance VGS=-2.
5V, IDS=-3A -16 -1 -30 -0.
4 -1.
1 ±100 40 50 65 80 Diode Characteristics VSD⑤ trr Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics⑥ ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs -1.
2 ...


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