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SMG2306A

SeCoS
Part Number SMG2306A
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Pr...
Datasheet PDF File SMG2306A PDF File

SMG2306A
SMG2306A

Overview
Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SMG2306A is universally used for all commercial-industrial applications.
FEATURES z Capable of 2.
5V gate drive z Lower on-resistance PACKAGE DIMENSIONS A L B Top View C F G H E D (Typ.
) Drain Gate Source K J M REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10° ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current3 ,VGS@4.
5V Drain Current3 ,VGS@4.
5V Pulsed Drain Current1, Power Dissipation Operating Junction and Storage Temperature Range VDS VGS ID @Ta=25℃ ID @Ta=7...


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