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CGHV27060MP

Cree
Part Number CGHV27060MP
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W galliu...
Datasheet PDF File CGHV27060MP PDF File

CGHV27060MP
CGHV27060MP

Overview
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.
4mm x 6.
5mm.
The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.
7GHz.
The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band (<2.
7GHz).
Additionally, the transistor is well suited for LTE micro basestation amplifiers in the power class of 10 to 15W average power in high efficiency topologies such as Class A/B, F or Doherty ...


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