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CGHV27015S

Cree
Part Number CGHV27015S
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mo...
Datasheet PDF File CGHV27015S PDF File

CGHV27015S
CGHV27015S

Overview
CGHV27015S 15 W, DC - 6.
0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications.
The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices.
At a Vdd of 50 V, the device provide 2.
5W of average power or 15W of peak power.
At a Vdd of 28V, the device provides 1S of avera...


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