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CGHV22200

Cree
Part Number CGHV22200
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobilit...
Datasheet PDF File CGHV22200 PDF File

CGHV22200
CGHV22200

Overview
CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.
8 - 2.
2 GHz LTE, 4G Telecom and BWA amplifier applications.
The transistor is input matched and supplied in a ceramic/ metal flange package.
PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1 Typical Performance Over 1.
8 - 2.
2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.
8 GHz 2.
0 GHz 2.
2 GHz Gain @ 47 dBm 16.
6 19.
2 18.
1 ACLR @ 47 dBm -37.
4 -37.
4 -35.
6 Drain Efficiency @ 47 dBm 31.
5 31.
9 34.
8 No...


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