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CGHV1J006D

Cree
Part Number CGHV1J006D
Manufacturer Cree
Description GaN HEMT Die
Published Apr 19, 2016
Detailed Description CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility ...
Datasheet PDF File CGHV1J006D PDF File

CGHV1J006D
CGHV1J006D

Overview
CGHV1J006D 6 W, 18.
0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.
25 μm gate length fabrication process.
This GaN-on-SiC product offers superior high frequency, high efficiency features.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D FEATURES • 17 dB Typ.
Small Signal Gain at 10 GHz • 60% Typ.
PAE at 10 GHz • 6 W Typical Psat • 40 V Operation • Up to 18GHz Operation APPLICATIONS • Satellite Communications • PTP Communications Links • Marine Radar • Pleasure Craft Radar • Port Vessel Traf...


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