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CGHV1F025S

Cree
Part Number CGHV1F025S
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobil...
Datasheet PDF File CGHV1F025S PDF File

CGHV1F025S
CGHV1F025S

Overview
CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications.
The datasheet specifications are based on a X-Band (8.
9 - 9.
6 GHz) amplifier.
The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency.
PackagPeN:TyCpGeH:V31xF40D25FSN Typical Performance 8.
9 - 9.
6 GHz (TC...


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