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CGHV14500

Cree
Part Number CGHV14500
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high el...
Datasheet PDF File CGHV14500 PDF File

CGHV14500
CGHV14500

Overview
CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.
2 - 1.
4 GHz L-Band radar amplifier applications.
The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz.
The package options are ceramic/metal flange and pill package.
Package Type:P4N4:0C1G17H,V41440510303 Typical Performance Over 1.
2-1.
4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.
2 GHz 1.
25 GHz 1.
3 GHz 1.
35 GHz Output Power 545 540 530 530 1.
4 GHz 530 ...


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