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CGH60030D

Cree
Part Number CGH60030D
Manufacturer Cree
Description GaN HEMT Die
Published Apr 19, 2016
Detailed Description CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEM...
Datasheet PDF File CGH60030D PDF File

CGH60030D
CGH60030D

Overview
CGH60030D 30 W, 6.
0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
PN: CGH60030D FEATURES APPLICATIONS • 15 dB Typical Small Signal Gain at 4 GHz • 12 dB Typical Small Signal Gain at 6 GHz • 30 W Typical PSAT • 28 V Operation • High Breakdown Voltage • High Temperature Operation • Up to 6 GHz Operation • High Efficiency • 2-Way Private Radio • Broadb...


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