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CGH60015D

Part Number	CGH60015D
Manufacturer	Cree
Description	GaN HEMT Die
Published	Apr 19, 2016
Detailed Description	CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HE...
Datasheet	CGH60015D PDF File

Overview

CGH60015D 15 W, 6.
0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
PN: CGH60015D FEATURES APPLICATIONS • 15 dB Typical Small Signal Gain at 4 GHz • 12 dB Typical Small Signal Gain at 6 GHz • 15 W Typical PSAT • 28 V Operation • High Breakdown Voltage • High Temperature Operation • Up to 6 GHz Operation • High Efficiency • 2-Way Private Radio • Broad...

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CGH60015D GaN HEMT Die - Cree

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