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CGH35015

Part Number	CGH35015
Manufacturer	Cree
Description	GaN HEMT
Published	Apr 19, 2016
Detailed Description	CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility...
Datasheet	CGH35015 PDF File

Overview

CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.
16-2004 WiMAX Fixed Access applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.
3-3.
9GHz WiMAX and BWA amplifier applications.
The transistor is available in both screw-down, flange and solder-down, pill packages.
PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P6 Typical Performance Over 3.
3-3.
8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.
3 GHz 3.
4 GHz 3.
5 GHz 3.
6 GHz 3.
7 GHz Small Signal Gain 13.
6 12.
8 12.
3 12.
2 12.
3 3.
8 GHz 12.
8 ...

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