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INJ0212AP1

Isahaya Electronics Corporation
Part Number INJ0212AP1
Manufacturer Isahaya Electronics Corporation
Description Silicon P-channel MOSFET
Published Apr 19, 2016
Detailed Description INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION INJ0210AP1 is a Silicon P-channel MOSFET. This pro...
Datasheet PDF File INJ0212AP1 PDF File

INJ0212AP1
INJ0212AP1

Overview
INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION INJ0210AP1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING 4.
4 1.
6 UNIT：mm 1.
5 1.
0 2.
4 FEATURE SDG MARKING ・Input impedance is high, and not necessary to consider a drive electric current.
・High drain current ID=-2.
5A ・Vth is low, and drive by low voltage is possible.
Vth=1.
0～2.
5V ・Low on Resistance.
RDS(on)=95mΩ(TYP).
・High speed switching.
APPLICATION 0.
5 1.
5 3.
0 0.
4 0.
4 TERMINAL CONNECTOR S：SOURCE D：DRAIN G：GATE JEITA：SC-62 JEDEC：SOT-89 Switching MAXIMUM RATING （Ta=25℃） Symbol Parameter R...


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