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IMT17

Diodes
Part Number IMT17
Manufacturer Diodes
Description DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Published Apr 19, 2016
Detailed Description Features • Epitaxial Planar Die Construction • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1)...
Datasheet PDF File IMT17 PDF File

IMT17
IMT17


Overview
Features • Epitaxial Planar Die Construction • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) IMT17 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Mechanical Data • Case: SOT-26 • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.
016 grams (approximate) C1 B2 E2 Top View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current E1 B1 C2 Device Schematic Symbol VCBO VCEO VEBO IC Value -60 -50 -5.
0 -500 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 3) @TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C /W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage (Note 3) SMALL SIGNAL CHARACTERISTICS Symbol Min Typ Max V(BR)CBO -60 — — V(BR)CEO -50 — — V(BR)EBO -5.
0 — — ICBO — — -0.
1 IEBO — — -0.
1 hFE 120 — 390 VCE(SAT) — — -0.
6 Unit Test Condition V IC = -100μA V IC = -1.
0mA V IE = -100μA μA VCB = -30V μA VEB = -4.
0V — VCE = -3.
0V, IC = -100mA V IC = -500mA, IB = -50mA Gain Bandwidth Product fT — 200 — MHz VCE = -5V, IE = 20mA, f = 100MHz Output Capacitance Cob — 7 — pF VCB = -10V, IE = 0, f = 1MHz Notes: 1.
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