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LSI1012LT1G

Part Number	LSI1012LT1G
Manufacturer	LRC
Description	N-Channel 1.8-V (G-S) MOSFET
Published	Apr 18, 2016
Detailed Description	LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source E...
Datasheet	LSI1012LT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
N-Channel 1.
8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.
8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.
7 W D Low Threshold: 0.
8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation LSI1012LT1G S-LSI1012LT1G 3 1 2 SOT-23 Gate 1 3 Drain APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D P...

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LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET - LRC

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