ISA1283AS1 Datasheet

ISA1283AS1 TRANSISTOR

ISA1283AS1 is a silicon PNP epitaxial type transistor designed for relay drive or power supply application. Complementary with 2SC5482. FEATURE ●High voltage VCEO=-60V ●High collector current. IC=-1A ●Low collector saturation voltage. VCE(sat)=-0.11V typical (@IC=-500mA, IB=-25mA) ●High collector di.

Features

ECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Parameter Test conditions V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO hFE※ VCE(sat) fT Cob C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E Saturation Voltage Gain band width product Collector output capacitance IC= -10μA , IE =0mA IE= -10μA , IC =0mA IC= -2mA , RBE= ∞ V CB= -50V , I E= 0mA V EB= -4V , I C= 0mA V CE = -4V , IC= -0.1A I C= -500mA , I B= -25mA V CE= -2V , I E= 10mA V CB= -10V , I E= 0mA,f=1MHz Limits Min Typ Max -60 - - -6 -.