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2SK3419

Renesas
Part Number 2SK3419
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description 2SK3419 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V ...
Datasheet PDF File 2SK3419 PDF File

2SK3419
2SK3419

Overview
2SK3419 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.
3 mΩ typ.
• 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1099-0200 (Previous: ADE-208-942) Rev.
2.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
2.
00 Sep 07, 2005 page 1 of 7 2SK3419 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 60 ±20 90 360 90 65 362 150 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4.
Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test Conditions V (BR) DSS 60 — — V ID = 10 mA, VGS = 0 IDSS — — 10 µA VDS = 60 V, VGS = 0 IGSS — — ±0.
1 µA VGS = ±20 V, VDS = 0 VGS (off) 1.
0 — 2.
5 V VDS = 10 V, ID = 1 mA Note 4 |yfs| 55 90 — S ID = 45 A, VDS = 10 V Note 4 RDS (on) — 4.
3 5.
5 mΩ ID = 45 A, VGS = 10 V Note 4 RDS (on) — 6.
0 9.
0 mΩ ID = 45 A, VGS = 4 V Note 4 Ciss — 9770 — pF VDS = 10 V Coss — 1340 — pF VGS = 0 Crss — 470 — pF f = 1 MHz Qg Qgs Qgd — 180 — — 32 — — 36 — nC VDD = 50 V nC VGS = 10 V nC ID = 90 A td (on) tr td (off) tf VDF trr — 53 — — 320 — ...


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