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2SD999

Jin Yu Semiconductor
Part Number 2SD999
Manufacturer Jin Yu Semiconductor
Description NPN Transistor
Published Apr 8, 2016
Detailed Description 2SD999 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Cu...
Datasheet PDF File 2SD999 PDF File

2SD999
2SD999

Overview
2SD999 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Current Gain Linearity SOT-89-3L 1.
BASE 2.
COLLECTOR 3.
EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain hFE(1)* hFE(2)* Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Base -emitter voltage VBE* Transition frequency fT Collector output capacitance Cob *Pulse test: pulse width ≤350μs, duty cycle≤ 2.
0%.
CLASSIFICATION OF hFE（1） Test conditions IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=1V, IC=100mA VCE=1V, IC=1A IC=1A,IB=0.
1A IC=1A,IB=0.
1A VCE=6V, IC=10mA VCE=6V,IC=10mA VCB=6V, IE=0, f=1MHz RANK RANGE MARKING CM 90–180 CM CL 135–270 CL Min Typ 30 25 5 90 50 0.
6 130 22 Max 0.
1 0.
1 400 0.
4 1.
2 0.
7 CK 200–400 CK Unit V V V µA µA V V V MHz pF JinYu semiconductor www.
htsemi.
com ...


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