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2SD1781K

WEJ
Part Number 2SD1781K
Manufacturer WEJ
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Apr 8, 2016
Detailed Description RoHS 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: .,LCollector current 200 mW (Ta...
Datasheet PDF File 2SD1781K PDF File

2SD1781K
2SD1781K

Overview
RoHS 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: .
,LCollector current 200 mW (Tamb=25℃) 1.
9 0.
95¡ À0.
025 1.
02 0.
35 2.
92¡ À0.
05 ICM℃ 0.
8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1.
BASE 2.
EMITTER 3.
COLLECTOR 2.
80¡ À0.
05 1.
60¡ À0.
05 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) NParameter Collector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current Emitter cut-off current CDC current gain ECollector-emitter saturation voltage LTransition frequency ECollector output ca...


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