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HU60N03

HAOLIN
Part Number HU60N03
Manufacturer HAOLIN
Description 30V N-Channel MOSFET
Published Apr 6, 2016
Detailed Description HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Orig...
Datasheet PDF File HU60N03 PDF File

HU60N03
HU60N03

Overview
HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ.
) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD60N03 HU60N03 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuou...


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