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11NB80

STMicroelectronics
Part Number 11NB80
Manufacturer STMicroelectronics
Description STW11NB80
Published Apr 5, 2016
Detailed Description www.DataSheet4U.com ® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE S TW 11NB 80 V DSS 800 V...
Datasheet PDF File 11NB80 PDF File

11NB80
11NB80

Overview
www.
DataSheet4U.
com ® STW11NB80 N-CHANNEL 800V - 0.
65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE S TW 11NB 80 V DSS 800 V RDS(on) < 0.
8 Ω ID 11 A s TYPICAL RDS(on) = 0.
65 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate cha...


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