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DMN2011UFDE

Diodes
Part Number DMN2011UFDE
Manufacturer Diodes
Description N-Channel MOSFET
Published Apr 5, 2016
Detailed Description ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ...
Datasheet PDF File DMN2011UFDE PDF File

DMN2011UFDE
DMN2011UFDE


Overview
ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.
5mΩ @ VGS = 4.
5V 11mΩ @ VGS = 2.
5V ID max TA = +25°C 11.
7A 10.
8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications • General Purpose Interfacing Switch • Power Management Functions U-DFN2020-6 DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features • 0.
6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gate Threshold Voltage • Low On-Resistance • ESD Protected Gate • Totally Lead-Free & Fully RoHS Com...



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