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2N4912

Central Semiconductor
Part Number 2N4912
Manufacturer Central Semiconductor
Description SILICON NPN TRANSISTORS
Published Apr 5, 2016
Detailed Description 2N4912 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4912 ...
Datasheet PDF File 2N4912 PDF File

2N4912
2N4912


Overview
2N4912 SILICON NPN POWER TRANSISTOR w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 80 80 5.
0 1.
0 1.
0 25 -65 to +200 7.
0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=80V ICEV VCE=80V, VEB=1.
5V ICEV VCE=80V, VEB=1.
5V, TC=150°C ICEO VCE=40V IEBO VEB=5.
0V BVCEO IC=100μA 80 VCE(SAT) IC=1.
0A, IB=100mA VBE(SAT) IC=1.
0A, IB=100mA VBE(ON) VCE1.
0V, IC=1.
0A hFE VCE=1.
0V, IC=50mA 40 hFE VCE=1.
0V, IC=500mA 20 hFE VCE=1.
0V, IC=1.
0A 10 hfe VCE=10V, IC=250mA, f=1.
0kHz 25 fT VCE=10V, IC=250mA, f=1.
0MHz 3.
0 Cob VCB=10V, IE=0, f=100kHz MAX 100 100 1.
0 500 1.
0 0.
6 1.
3 1.
3 100 100 UNITS V V V A A W °C °C/W UNITS μA μA mA μA mA V V V V MHz pF R1 (2-September 2014) 2N4912 SILICON NPN POWER TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
c o m R1 (2-September 2014) ...


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